Iranian Journal of Materials Science and Engineering

---

Copper oxide thin layers were elaborated using the sol-gel dip-coating. The thickness effect on morphological, structural, optical and electrical properties was studied. Copper chloride dihydrate was used as precursor and dissolved into methanol. The scanning electron microscopy analysis results showed that there is continuity in formation of the clusters and the nuclei with the increase of number of the dips. X-ray diffractogram showed that all the films are polycrystalline cupric oxide CuO phase with monoclinic structure with grain size in the range of 30.72 - 26.58 nm. The obtained films are clear blackin appearance, which are confirmed by the optical transmittance spectra. The optical band gap energies of the deposited films vary from 3.80 to 3.70 eV. The electrical conductivity of the films decreases from 1.90.10^-2 to 7.39.10^-3 (Ω.cm)^-1

---

Zinc oxide (ZnO) thin films have garnered significant interest for their applications in optoelectronics and environmental remediation due to their exceptional optical, electrical, and photocatalytic properties. However, the high resistivity and rapid charge recombination of pure ZnO necessitate doping to enhance its performance. In this study, ZnO thin films doped with tin (Sn) and aluminum (Al) were synthesized via a cost-effective pneumatic spray technique. The structural, optical, and morphological properties of the films were systematically characterized using X-ray diffraction (XRD), UV-Vis spectrophotometry, scanning electron microscopy (SEM), and energy-dispersive X-ray spectroscopy (EDX). The results indicate that Sn and Al doping significantly influence ZnO’s crystallinity, bandgap energy, and surface morphology. The optimal crystallite size was obtained for 1 wt.% Sn (37.98 nm) and 5 wt.% Al (48.63 nm), while excessive doping (>3 wt.%) introduced microstrain (10.41 × 10⁻⁴ for Sn and 7.13 × 10⁻⁴ for Al), reducing crystallinity. The optical bandgap decreased from 3.254 eV (pure ZnO) to 3.142 eV (1 wt.% Sn) and 3.152 eV (5 wt.% Al), accompanied by increased Urbach energy (0.34 eV for 5 wt.% Al). The highest optical transmittance (86%) was observed for 3 wt.% Al-doped ZnO. Pure ZnO exhibited the highest photocatalytic efficiency, achieving 85% methylene blue degradation under solar irradiation. Langmuir adsorption modeling revealed that Sn-doped ZnO exhibited the highest adsorption capacity (1.422 mg/g), followed by Al-doped ZnO (0.617 mg/g) and pure ZnO (0.495 mg/g). These findings emphasize the critical role of doping concentration in optimizing ZnO thin films for advanced photocatalytic and optoelectronic applications.

---

In this study, we thoroughly examine β-Bi₂O₃ thin films as potential photocatalysts. We produced these films using an environmentally friendly Sol Gel method that is also cost-effective. Our research focuses on how different precursor concentrations, ranging from 0.1 M to 0.4 M, affect the photocatalytic performance of these films. We conducted a comprehensive set of tests to analyze various aspects of the films, including their structure, morphology, topography, optical properties, wettability, and photocatalytic capabilities. These tests provided us with a well-rounded understanding of the films' characteristics. To assess their photocatalytic efficiency, we used Methylene Blue (MB) as a contaminant and found that the films, particularly those with a 0.1 M concentration, achieved an impressive 99.9% degradation of MB within four hours. The 0.1 M film had a crystalline size of 39.7 nm, an indirect band gap of 2.99 eV, and a contact angle of 51.37°. Our findings suggest that β-Bi₂O₃ films, especially the 0.1 M variant, have promising potential for treating effluents from complex industrial dye processes. This research marks a significant step in utilizing sustainable materials to address pollution and environmental remediation challenges.