Volume 8, Issue 2 (spring 2011 2011)                   IJMSE 2011, 8(2): 34-40 | Back to browse issues page

XML Print

Download citation:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:
M. Ramya, S. Ganesan. STUDY OF THICKNESS DEPENDENT CHARACTERICTICS OF Cu2S THIN FILM FOR VARIOUS APPLICATIONS. IJMSE 2011; 8 (2) :34-40
URL: http://ijmse.iust.ac.ir/article-1-339-en.html
STUDY OF THICKNESS DEPENDENT CHARACTERICTICS OF Cu2S THIN FILM FOR VARIOUS APPLICATIONS
M. Ramya , S. Ganesan
Abstract:   (19954 Views)
Abstract: Different thickness of Cu2S thin films were prepared by vacuum evaporation under a pressure of 10-6 torr at an evaporation rate of 3Å /sec. Cu2S has direct band gap energy and indirect band gap energy at 1.2eV and 1.8 eV respectively. This paper presents the analysis of structural and optical properties of the Cu2S thin film by X-ray diffractometer (XRD) and UV-Vis-NIR Spectrophotometer. XRD studies showed ploycrystallinity of CuXS thin films at higher thickness. Optical spectra of Cu2S film exhibit high transmittance in the visible region and high absorbance in the near infra-red region. Moreover, the optical property of the film confirms that transmission mainly depends on the thickness of the film. Structural and resistivity property reveals that Cu2S film at higher thicknesses shows slight deviations in stoichiometry. Possible applications of the Cu2S thin films are also discussed.
Keywords: Thin Film -Cu2S- Vacuum Evaporation- Resistivity- Structural property
Full-Text [PDF 308 kb]   (6892 Downloads)    
Type of Study: Research Paper |
Add your comments about this article : Your username or Email:
CAPTCHA
Send email to the article author

Rights and permissions
Creative Commons License This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.

© 2022 All Rights Reserved | Iranian Journal of Materials Science and Engineering

Designed & Developed by : Yektaweb